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IXFN32N120P Module
| Data Sheet | IXFN32N120P Module |
| 型号 | IXFN32N120P |
| 厂商 | IXYS |
| Type of module | MOSFET transistor |
| Semiconductor structure | single transistor |
| Drain-source voltage | 1.2kV |
| Drain current | 32A |
| Case | SOT227B |
| Mounting | screw |
| Electrical mounting | screw |
| Polarisation | unipolar |
| On-state resistance | 310mΩ |
| Pulsed drain current | 100A |
| Power dissipation | 1000W |
| Technology | HiPerFET™, Polar™ |
| Kind of channel | enhanced |
| Gate charge | 360nC |
| Reverse recovery time | 300ns |
| Gate-source voltage | ±40V |
| 别名 | IXFN32NL20P IXFN32N12OP |
In the following cases, we will make a free reissue or full refund
Product cannot use in warranty period because of product quality problems
Product is damaged in transit
Product is not delivered in time because of our reason
Process of free reissue or full refund
Buyers send an email to our customer service to describe the problem, and to provide evidence (clear photos, screenshots, or video)
We will check the problem in 1 working days. For eligible cases, we will provide a free replacement or full refund within 1-2 business days
If a return is required, the return shipping fee will be paid by us
IXFN32N120P Module
| Gross Weight | 1 |
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