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IXFN32N120P Module

$28.98

IXFN32N120P IXYS

Data Sheet IXFN32N120P Module
ModelIXFN32N120P
ManufacturerIXYS
Type of moduleMOSFET transistor
Semiconductor structuresingle transistor
Drain-source voltage1.2kV
Drain current32A
CaseSOT227B
Mountingscrew
Electrical mountingscrew
Polarisationunipolar
On-state resistance310mΩ
Pulsed drain current100A
Power dissipation1000W
TechnologyHiPerFET™, Polar™
Kind of channelenhanced
Gate charge360nC
Reverse recovery time300ns
Gate-source voltage±40V
IXFN32N120P Module
IXFN32N120P Module
IXFN32N120P Module
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In the following cases, we will make a free reissue or full refund

Product cannot use in warranty period because of product quality problems

Product is damaged in transit

Product is not delivered in time because of our reason


Process of free reissue or full refund

Buyers send an email to our customer service([email protected]) to describe the problem, and to provide evidence (clear photos, screenshots, or video)

We will check the problem in 1 working days. For those meet the requirements, free reissue or full refund will be made within 1 working days

If a return is required, the return shipping fee will be paid by us

IXFN32N120P Module

Gross Weight 1
IXFN32N120P Module